PMZ350XN,315

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PMZ350XN,315 datasheet

• Маркировка
  PMZ350XN,315
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMZ350XN,315 Configuration: Single Continuous Drain Current: 1.87 A Current - Continuous Drain (id) @ 25?° C: 1.87A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.65nC @ 4.5V Gate-source Breakdown Voltage: +/- 12 V ID_COMPONENTS: 1950429 Input Capacitance (ciss) @ Vds: 37pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Power - Max: 2.5W Power Dissipation: 2500 mW Rds On (max) @ Id, Vgs: 420 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.42 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 12 V Resistance Drain-Source RDS (on): 0.42 Ohms Fall Time: 5.5 ns Rise Time: 9.5 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 14 ns Part # Aliases: PMZ350XN T/R Other Names: 934060154315, PMZ350XN T/R
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

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